High speed modulation semiconductor lasers.

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Power Supply and Current Modulation Circuits for Semiconductor Lasers

Design and construction of a stable current supply with protection circuits are described. The reported circuit provides a high-stable and high-level current variable from 0.5-1.2 A with the protect ion circuits to prevent over load current, voltage and off-range temperature operation. A detailed analysis of the circuit parameters is given and the time behaviors of the load voltage/current and ...

متن کامل

High-Speed Direct-Modulation of InP Microdisk Lasers

We demonstrate for the first time high-speed direct-modulation of InP microdisk lasers by exploiting longitudinal mode competition. High-speed operation is demonstrated by means of S21 and PRBS modulation. We show open eye diagrams and bit-error rates up to 10 Gb/s.

متن کامل

High speed modulation of hybrid silicon evanescent lasers

High-speed modulation results and analysis of hybrid silicon evanescent lasers is described. It should be possible to achieve a 3dB-bandwidth over 50 GHz and a data rate of 50 Gbit/s. 2009 Optical Society of America OCIS codes: (130.3120) Integrated optics devices; (130.3130) Integrated optics materials

متن کامل

Advances in high brightness semiconductor lasers

We review recent advances in high power semiconductor lasers including increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime. Data are presented which demonstrate both edge emitter devices and high power surface emitting 2-dimensional arrays with internal gratings to narrow and stabilize the spect...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: The Review of Laser Engineering

سال: 1988

ISSN: 0387-0200,1349-6603

DOI: 10.2184/lsj.16.797